Applied Materials Technologies Enable 2D Scaling with EUV and 3D Gate-All-Around Transistors (Shannon Davis/Solid State Technology)

Shannon Davis / Solid State Technology
Applied Materials Technologies Enable 2D Scaling with EUV and 3D Gate-All-Around Transistors – Applied Materials, Inc. today introduced innovations that help customers continue 2D scaling with EUV and detailed the industrys broadest portfolio of technologies for manufacturing next-generation 3D Gate-All-Around transistors. Applied Materials Technologies Enable 2D Scaling with EUV and 3D Gate-All-Around Transistors was posted by Shannon Davis on Semiconductor Digest. Chipmakers are …

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